Book chapters will be unavailable on Saturday 24th August between 8am-12pm BST. This is for essential maintenance which will provide improved performance going forwards. Please accept our apologies for any inconvenience caused.
To send content items to your account,
please confirm that you agree to abide by our usage policies.
If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account.
Find out more about sending content to .
To send content items to your Kindle, first ensure firstname.lastname@example.org
is added to your Approved Personal Document E-mail List under your Personal Document Settings
on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part
of your Kindle email address below.
Find out more about sending to your Kindle.
Note you can select to send to either the @free.kindle.com or @kindle.com variations.
‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi.
‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.
The status of SiC vapor growth technique (PVT) is reviewed and related innovative aspects are introduced. Problems of the preparation of SiC crystals with uniform electronic properties are addressed, especially the growth of semiinsulating SiC. An overview about the performance of numerical modeling is given as tool for the optimization of the PVT process. Development activities in the field of liquid phase processing for the preparation of SiC bulk crystals and micropipe healing are presented. Finally recent results on the present understanding of filamentary void formation/elimination (micropipes, macrodefects) are summarized.
An advanced method based on x-ray imaging is presented which allows us to visualize the ongoing processes during physical vapor transport (PVT) growth of SiC. Using a high resolution and high speed x-ray imaging detector based on image plates and digital recording we are able to follow the SiC bulk single crystal growth as well as the evolution of the SiC powder source inside the inductively heated graphite crucible on-line and quasi-continuously.
Email your librarian or administrator to recommend adding this to your organisation's collection.