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The surface properties of the (0001) surfaces of single crystals of hafnium and hafnium diboride are compared with a boride film deposited on the Hf(0001) surface. The surfaces were characterized with X-ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED). Boron deposition was achieved through the thermal decomposition of diborane. The deposited boron reacts with the hafnium substrate to form HfB2 as determined by XPS and the HfB2 films were found to be epitaxial as determined by LEED. The epitaxial nature of the thin films was confirmed with X-ray diffraction. The epitaxial thin films of HfB2 on Hf(0001) display properties identical to those of the HfB2(0001) single crystal surface.
Thin SiN films deposited by plasma enhanced chemical vapor deposition (PECVD) have been analyzed by a variety of analytical techniques including Fourier Transform Infrared Spectroscopy (FTIR), X-ray reflectivity (XRR), and Rutherford Backscattering Spectrometry/Hydrogen Forward Scattering (RBS/HFS) to collect data on bonding, density and chemical composition respectively. Both tensile and compressive SiN films have been deposited and analyzed. Mechanisms of stress formation in SiN thin films are discussed. It has been found that amount of bonded hydrogen as detected by FTIR is higher for compressive films compared to tensile SiN films. Amount of bonded hydrogen in a film is correlated well with tensile stress. Effect of deposition temperature and other process parameters on stress have been studied. Exposure of SiN films to elevated temperature after deposition lead to increase in tension and degradation in compressive stress. New approaches to stress generation in thin films like creation of multilayer film structures have been delineated.
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