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In this work a new generation of periodic mesoporous organosilica (PMO) low-k dielectrics with targeted k-values 2.0 and 1.8 is evaluated. In addition, impact of two different curing processes on properties of the mesoporous material is analyzed. It is shown that removal of templating organics with thermal annealing leads to formation of mechanically robust and chemically very stable material, while application of UV-assisted curing with broadband lamp (λ > 200 nm) causes pronounced decrease of film ability to sustain in diluted HF solution. The explanation of that phenomenon is given in terms of silica-ring structures formed within organosilica skeleton.
Continuous decrease of the feature size of transistors in modern integrated circuits (ICs) constrains thickness of auxiliary dielectric layers in interconnects because of their relatively high dielectric constant, which reduces the efficiency of low-k material integration. Dielectric materials used today as barrier or etch-stop layers are usually SiN (k ∼ 7.0) and SiCN (k ∼ 4.8), which k-value significantly exceeds that of recent ultra low-k materials (k < 2.2). In our work we have investigated thin films of rigid-chain polyimide (PI) with a k-value of about 3.2-3.3. This film was deposited using a Langmuir-Blodgett (LB) technique and can be as thin as several monolayers. The intermolecular interaction of densely packed precursor macromolecules within a monolayer formed at the water-air interface makes it possible to avoid penetration of precursor material inside the pores. The latter peculiarity of the deposition process results in a pore sealing effect using a 4 nm PI film.
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