A non destructive SEM observation method has been applied to investigate the
extended defects created by pulsed electron beam annealing of
arsenic–implanted silicon. The defect study was performed on bevelled
samples after irradiation using variable beam fluences for both a 20°C or a
450°C specimen starting temperature. Dislocation generation resulting in
subgrain boundaries formation occurs during regrowth of the silicon layer
which has been heated up to the melt point or higher. For the rather
penetrating electron beam pulse used in this work the subgrain size and
their depth extent depend on the beam fluence and the substrate temperature.
For 450°C pre‐heated samples, annealing of the arsenic implant is possible
without any stable extended defect creation using the 1.0 – 1.2
J.cm−2 fluence range.