To study the interface characteristics between substrates and homoepitaxially grown single crystalline diamond layers, the high-pressure/high-temperature Ib diamond seeds with homoepitaxial diamond layers were annealed by low-pressure/high-temperature treatment in a hydrogen environment. The stress evolution and related impurity transformation near the interface were characterized by Raman spectroscopy, photoluminescence, and micro-infrared spectroscopy before and after annealing. It is found that the stress is the smallest in a 100 μm wide zone near the interface, accompanying with the similar change in substitutional nitrogen (Ns) concentration. After annealing at 1050 °C, 1250 °C, and 1450 °C, the local compressive stress is released gradually with temperature change. It is decreased by 1.03 GPa in maximum after annealing at 1450 °C. The concentration of nitrogen–vacancy (NV) complexes in the chemical vapor deposition (CVD) layer is dramatically reduced at 1450 °C. The value of ${{I_{{\rm{NV}}^ \hbox- } } \mathord{\left/ {\vphantom {{I_{{\rm{NV}}^ - } } {I_{{\rm{diamond}}} }}} \right. \kern-\nulldelimiterspace} {I_{{\rm{diamond}}} }}$ decreases much more than ${{I_{{\rm{NV}}^0 } } \mathord{\left/ {\vphantom {{I_{{\rm{NV}}^0 } } {I_{{\rm{diamond}}} }}} \right. \kern-\nulldelimiterspace} {I_{{\rm{diamond}}} }}$ in the CVD layer, which is due to the lower stability of NV− compared with NV0 at high temperature.

The aim of the present study was to explore the influence of tea consumption on diabetes mellitus in the Chinese population. This multi-centre, cross-sectional study was conducted in eight sites from south, east, north, west and middle regions in China by enrolling 12 017 subjects aged 20–70 years. Socio-demographic and general information was collected by a standardised questionnaire. A standard procedure was used to measure anthropometric characteristics and to obtain blood samples. The diagnosis of diabetes was determined using a standard 75-g oral glucose tolerance test. In the final analysis, 10 825 participants were included and multiple logistic models and interaction effect analysis were applied for assessing the association between tea drinking with diabetes. Compared with non-tea drinkers, the multivariable-adjusted OR for newly diagnosed diabetes were 0·80 (95 % CI 0·67, 0·97), 0·88 (95 % CI 0·71, 1·09) and 0·86 (95 % CI 0·67, 1·11) for daily tea drinkers, occasional tea drinkers and seldom tea drinkers, respectively. Furthermore, drinking tea daily was related to decreased risk of diabetes in females by 32 %, elderly (>45 years) by 24 % and obese (BMI > 30 kg/m2) by 34 %. Moreover, drinking dark tea was associated with reduced risk of diabetes by 45 % (OR 0·55; 95 % CI 0·42, 0·72; P < 0·01). The results imply that drinking tea daily was negatively related to risk of diabetes in female, elderly and obese people. In addition, drinking dark tea was associated with decreased risk of type 2 diabetes mellitus.

We investigated attitudes toward 10 specific groups of individuals with disabilities among students in college settings. These groups comprised major depression, substance use disorder (SUD), anxiety disorder, autism spectrum disorder (ASD), cerebral palsy, hearing impairment, learning disability, visual impairment, spinal cord injury, and cancer survivor. The multidimensional scaling (MDS) analysis revealed a two-dimension space representing participants’ attitudes toward those disabilities. The MDS biplot further indicated higher levels of perceived dangerousness from the groups with SUD, major depression, anxiety disorder, and ASD. The hierarchical cluster analysis revealed that cluster A (SUD and major depression) was rated as having the highest level of social distance (i.e., negative attitudes). The implications for research and practice in rehabilitation counseling were discussed.

A study of 7,388 consecutive patients after hepatic resection between 2011 and 2012 identified hepatolithiasis, cirrhosis, and intraoperative blood transfusion as the only independent risk factors of both incisional and organ/space surgical site infection (SSI). Patients with these conditions should be cared for with caution to lower SSI rates.

Polycrystalline Ba8Ga16MgxGe30−x compounds were synthesized by combining solid-state reaction with spark plasma sintering (SPS) method. The structural and electronic properties of Mg-substituted Ge type-I clathrate phase Ba8Ga16MgxGe30−x (x = 1, 2, 3, 4) were investigated experimentally and theoretically. Theoretically structural and electronic properties of Ba8Ga16MgxGe30−x were calculated by first-principles method based on the density-functional theory. The results indicate a strong preference for the occupation of the 6c sites by Mg. It is found that Mg substitution for Ge can lower the melting points and bulk modulus of this system. The formation energies and the binding energies decrease with increasing Mg content, suggesting that the Mg-doped Ba8Ga16Ge30 clathrates are stable in a limited range of composition. The calculated results show that these alloys are all indirect gap semiconductors and the values of band gap increase with the increase of Mg content. All specimens exhibit the behavior of the p-type conduction, which is originated from the presence of a shallow acceptor energy level. The electrical conductivity and the room-temperature carrier mobility decrease with increasing Mg content, while the room-temperature carrier concentration increases with increasing Mg content.

The crystal structure of a-plane GaN/ZnO heterostructures on r-plane sapphire was investigated by using the XRD and TEM measurment. It was found the formation of (220) ZnGa2O4 and crystal orientation of semipolar (10$\bar 1$3) GaN at GaN/ZnO interface. The epitaxial relation of normal surface direction are the sapphire (1$\bar 1$02) // a-GaN (11$\bar 2$0) and ZnGa2O4 (220) // semi-polar GaN (10$\bar 1$$\bar 3$). Beside, the emission peak energy of ZnO appears shift about 60 meV in the GaN/ZnO/GaN heterostructures due to the re-crystallization of ZnO layer with Ga or N atom and the formation of the localized state.

The optically detected magnetic resonance (ODMR) technique has been employed to examine the nature and formation mechanism of non-radiative defects in GaNAs and InGaAsN. In both alloys, two defects were observed and were shown to be deep-level, non-radiative recombination centers. One of the defects has been identified as a complex involving an AsGa antisite. These two defects gain more importance with increasing N composition up to 3%, presumably due to an increase in their concentration. With a further higher N composition, the defects start to lose importance in carrier recombination that is attributed to an increasingly important role of other new non-radiative channels introduced with a high N composition. On the other hand, effect of In composition up to 3% seems to be only marginal. Both defects were shown to be preferably introduced in the alloys during low-temperature growth by molecular beam epitaxy (MBE), but can be rather efficiently removed by post-growth rapid thermal annealing.

Variations in stress and grain size of Ti- and TiN- capped Al thin films passivated by fluorinated silicon dioxide (SiOF) during repetitive thermal cycling are investigated. The amount of stress relaxation, elastic and plastic behavior of these thin film structures are compared. Ti and TiN cap layers strengthen the single Al film significantly while the presence of SiOF induces plastic deformation of metal layers. Less grain growth is associated with a dielectric passivated Al film. The penetration of fluorine into Al upon annealing can be reduced by a TiN barrier layer.