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In-situ surface photo-absorption (SPA) method was applied to study the dynamic surface processes and the static surface structures during metal-organic vapor phase epitaxy (MOVPE). Observed spectra in near-ultaviolet and visible regions consist of an anisotropic dielectric response due to surface dimer-bonds as well as an isotropic response probably due to surface back-bonds. Time-resolved spectra showing dynamic changes of surface can be measured by the use of optical multichannel analyzer. The rate of surface decomposition of source molecule was measured as the change of reflectivity at a fixed wavelength. The decomposition of source molecule was characterized quantitatively, and various effects on the decomposition were studied. The style of decomposition and the activation energy depended on the substituent of source molecule and the rate of decomposition was affected by the surface potential and the strain.
Nitrogen and helium mixed gas plasma was used to grow p-ZnSe. Using the mixed gas, the acceptor concentration could be controlled from 6x1016 to 7x1017 cm−3 while films doped using the nitrogen plasma exhibited the acceptor concentration of 3x1017 cm−3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the rf power. Plasma spectroscopy was used to characterize the variety of the species in the plasma. Although the variety of the nitrogen related peaks in the spectrum were not significantly affected by the gas mixing, several peaks (for example 745nm and 825nm) showed intensity variation that was similar to the acceptor concentration variation with respect to the N2 and He gas mixing ratio.
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