Polycrystalline silicon (polySi) is widely used in the semiconductor industry as a gate electrode, interconnect material and for various other applications. Small variations in deposition conditions can significantly affect this material's properties, cause errors in metrology control of the film thicknesses and, ultimately, in device performance. In this work polySi was LPCVD deposited in a vertical reactor with multiple gas inlets and a flat temperature distribution. Deposition conditions were controllably changed to create a matrix of wafers. Characterization is done using production dual wavelength, multiple-angle-of-incidence and research grade spectroscopie ellipsometers. PolySi thickness and composition uniformity are analyzed.