Electron paramagnetic resonance (EPR) spectroscopy has been used to identify paramagnetic intrinsic bonding defects and impurities in as-deposited thin solid SiO2 films. Thin films grown by E-beam vacuum deposition, RF sputtering, thermal oxidation of polysilicon, plasma enhanced chemical vapor deposition (PECVD), and low pressure chemical vapor deposition (LPCVD) techniques have been examined. Some of the growth techniques yield films that have paramagnetic centers similar to those found in bulk radiation-damaged vitreous SiO2. A new temperature dependent EPR center was observed in PECVD SiO2 films and has been assigned to trapped NO2. Slow-motional EPR lineshape theory was used to analyze the temperature dependent spectra.