A new route is presented for the development of Orientation-Patterned Gallium Arsenide (OP-GaAs) for both guided and non-guided optical applications. The method is based on the use of the near-equilibrium growth process HVPE (Hydride Vapour Phase Epitaxy) that enables thick, high quality and orientation-preserving regrowth over dimensions fully compatible with targeted applications. The control of the growth anisotropy permits to preserve the original periodic arrangement of the initial template so that OP-GaAs substrates can be fabricated with pattern width and structure thickness ranging respectively from 1.8 to 110μm and 20 to 500μm. Such a large scope of dimensions appears useful either for bulk structures such as Optical Parametric Oscillators (OPO) or telecommunication applications. As an example, we suggest that combining this growth method with mechano-chemical polishing process could decrease propagation losses on AlGaAs waveguide structures for frequency conversion in telecom bands.