μc-Si has traditionally been deposited by Hot Wire CVD at a low filament temperature. At these temperatures, silicides rapidly form on the filament surface, leading in the case of a tungsten filament to both film reproducibility and filament lifetime issues. By depositing films consecutively using identical deposition parameters, these issues are chronicled for a filament temperature of ∼ 1750°C. Upon increasing the filament temperature to ∼1825-1850°C, these reproducibility and lifetime issues disappear and, by lowering both the substrate temperature and chamber pressure, device quality μc-Si is deposited at high deposition rates in a filament regime where tungsten silicide formation is minimal. Both single junction and tandem solar cells are fabricated using this material, confirming the validity of this approach.