The structural and electrical properties of epitaxial CoSi2, grown on Si(001) by molecular beam epitaxy, have been investigated. Most growth conditions successful on Si(111) have been found to result in misoriented grains when applied to Si(001). However, single-orientation (001) CoSi2 films, with low resistivities (16 µΩ-cm) and low ion channeling minimum yields (χ
=5%), have been obtained by direct codeposition of Co and Si at ~500°C at Co-rich stoichiometries. Single orientation (001) CoSi2 films have also been obtained by using a template method on epitaxially grown Si buffer layers, but the resistivities of these films have not been as good. A Schottky barrier height of 0.71 eV has been measured for single-orientation CoSi2(001)/Si(001). This is significantly higher than the barrier height of 0.64 eV for CoSi2(111)/Si(111).