Backside secondary ion mass spectrometry (SIMS) is employed to examine the Ge/Pd non-alloyed ohmic contact on InGaAs. 130 nm Ge/ 50 nm Pd contacts were deposited on an InP/InGaAs marker layer structure. The contacts were annealed for various times at 200°C and 325°C. Samples were mechanically and chemically thinned to facilitate sputter profiling from the backside, thereby avoiding problems such as roughening or non-uniformity of the metallic layers. Subsequent to depth profiling, additional anneals were performed on the thinned samples, and the samples were reexamined. Extensive reaction of Pd with InGaAs is observed on deposition. Little additional reaction occurs at 200°C. At 325°C, Pd is reclaimed from the reacted surface region, forming PdGe with some excess Ge at the interface. In-diffiision of Pd and Ge into InGaAs is observed at longer annealing times. The results are contrasted with prior studies on GaAs, InP, and InGaAs.