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A major problem for diamond coating applications is that diamond films tend to exhibit poor adherence on many. substrates and typically disbond at thicknesses of the order of few micrometers due especially to residual stresses. Residual stresses in diamond are composed of thermal expansion mismatch stresses and intrinsic stresses induced during film growth. Diamond films were deposited in a classical microwave plasma reactor from hydrocarbon-hydrogen-oxygen gas mixtures. Thermal stresses were directly calculated from Hook's law. On silicon substrate, intrinsic stresses were deduced by difference from measurements of total stresses either by the curvature method or by X-ray diffraction using the sin 2ψ method. These investigations allow us to discuss the origin of the intrinsic stresses. The residual stress level was also investigated by Raman spectroscopy as a function of the deposition conditions and substrate materials (SiO2, Si3N4, Si, SiC, WC-Co, Mo and Ti-6A1-4V). We show that the thermal stresses are often preponderant.
Brillouin light scattering has been used to investigate the elasticity
properties of polycrystalline smooth fine-grained diamond films having various
diamond qualities. They have been deposited on titanium alloy Ti-6Al-4V by a
two-step microwave plasma-assisted chemical vapour deposition process
at 600°C. Taking advantage from the detection of a number of different
acoustic modes, a complete elasticity characterization of the films
has been achieved.
A powerful micro SIMS technique coupled to a computer driven acquisition system has allowed the simultaneous recording of C−, MoO−, and Si− images of the sample surfaces, or of the transverse cross sections of the Mo-diamond interface. Diamond deposition has been shown to take place on a Mo2C layer, and the influence on the nucleation process of Si contamination, coming from the quartz tube etched by H atoms, has been investigated. Contamination can in fact occur during the shutdown procedures or during the whole experiment. This last contamination can be avoided by using suitable pressure ranges or gas combinations. Moreover, the deposition time necessary to obtain well-crystallized diamond films and the nucleation density could be optimized by an in situ pretreatment stage. This treatment reduces the delay observed before nucleation (which would correspond to the carbide formation), and increases the carbon activity at the sample surface.
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