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Sheet resistance (Rs) reductions are presented for antimony and arsenic doped layers produced in strained Si. Results re-emphasise the Rs reduction for As comes purely as a result of mobility improvement whereas for Sb, a superior lowering is observed from improvements in both mobility and activation. For the first time, strain is shown to enhance the activation of dopant atoms whilst Sb is seen to create stable ultra-shallow junctions. Our results propose Sb as a viable alternative to As for the creation of highly activated, low resistance ultra-shallow junctions for use with strain-engineered CMOS devices.
We have experimentally studied the photoluminescence (PL) properties of Si clusters in SiO2 glassy matrices. Si clusters in the SiO2 matrices were fabricated by Si+ ion implantation into SiO2 glasses and then thermally annealed in forming gas. Broad PL peaks are observed in the visible spectral region at room temperature. Resonantly excited PL spectra indicate that the strong coupling of excitons and stretching vibrations of the Si-0 bonds causes the broad luminescent spectra. It is concluded that the interaction between electronic and vibrational excitations controls the luminescent emission and the observed dynamics.
Thirty-two composite resections were carried out in the Department of Otolaryngology at Groote Schuur Hospital for oral and oro-pharyngeal squamous carcinoma over the 10-year period, 1977–1986. Three patients were lost to review but all others were followed up to death or to five years. Twenty-seven patients underwent surgery as their primary procedure and five for recurrence after primary radiotherapy. The overall survival was 16 patients at three years and eight at five years. Only one of the five patients who underwent salvage surgery after failed radiotherapy was alive at five years and all five experienced serious postoperative complications. All thosesurviving over five years had had either N0 or N1, disease at the time of presentation for surgery.
200 keV Co+ ions have been implanted into (100), (110) and (111) single crystal silicon substrates to doses of 2 × 1017 Co+ cm−2 and 5 × 1017 Co+ cm−2. During implantation the substrates were tilted at an angle of 70 to the incident ions and maintained at a temperature of 350°C. The experimental results, after implantation, are in close agreement with those obtained by computer simulations, which allow the single crystal orientation of the target and its position with respect to the incident ions to be specified. 5s RTA treatment at 1100°C was found to give CoSi2 layers of similar crystalline quality and resistivity to those produced by conventional furnace annealing.