The effects of different hydrogen or equivalent deuterium treatments on CdTe superficiallayers are studied. Surface chemical analysis is performed by x-ray photoelectron spectroscopy and hydrogen profiles are controlled by secondary ion mass spectroscopy using deuterium. Hydrogen plasma etching leads to a clean and nearly stoichiometric surface, and the surface abrasion rate is higher than the hydrogen in-diffusion rate. Deuterium implantation by a Kaufman source leads to surface depleted of tellurium and prevents them from further oxidation. Annealing under deuterium gas produces a similar surface, free fromoxide, but not stable with regard to further oxidation.