A polymer field-effect transistor (FET) was fabricated with poly(3-hexylthophene) as an active layer and poly(methyl-methacrylate) gate dielectric modified with poly(vinyl alcohol). The influences of air atmosphere on the FET property were investigated. Under the air atmosphere, FET properties such as modulation of drain current by gate bias, leakage current and threshold voltage shift were strongly influenced by humidity. An influence was investigated by temperature dependence of FET properties. It cleared the relationship between the FET property and intrinsic mobile ion in the gate dielectric. The influence of humidity on the FET property can be prevented by insertion of a clay mineral layer, which clogs motion of ion transport in gate dielectric layer.
