9 results
Experimental and Theoretical Studies of Resistive Switching in Grain Boundaries of Polycrystalline Transition Metal Oxide Film
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- Journal:
- MRS Advances / Volume 2 / Issue 4 / 2017
- Published online by Cambridge University Press:
- 09 January 2017, pp. 229-234
- Print publication:
- 2017
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Simulation Study on Reproducing Resistive Switching Effect by Soret and Fick Diffusion in Resistive Random Access Memory
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- Journal:
- MRS Advances / Volume 1 / Issue 49 / 2016
- Published online by Cambridge University Press:
- 13 June 2016, pp. 3373-3378
- Print publication:
- 2016
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Formation Mechanism of Conducting Path in Resistive Random Access Memory by First Principles Calculation Using Practical Model Based on Experimental Results
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- Journal:
- MRS Advances / Volume 1 / Issue 49 / 2016
- Published online by Cambridge University Press:
- 20 June 2016, pp. 3367-3372
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- 2016
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Role of Anode on Resistance Switching Phenomenon of Metal Oxide Resistive Random Access Memory
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1805 / 2015
- Published online by Cambridge University Press:
- 29 May 2015, mrss15-2136151
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- 2015
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The Influence of Water Absorbed in Grain Boundary of a Polycrystalline NiO Layer on the Memory Characteristics of Pt/NiO/Pt Resistive Random Access Memory (ReRAM)
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1691 / 2014
- Published online by Cambridge University Press:
- 19 August 2014, mrss14-1691-bb10-07
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- 2014
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Correlation between Controllability of Reset Current and Electrostatic Energy Released from the Self Capacitance of Conducting Bridge Random Access Memory
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1430 / 2012
- Published online by Cambridge University Press:
- 12 June 2012, mrss12-1430-e08-04
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- 2012
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Insight into Distribution and Switching of ReRAM Filaments Based on Variation Analysis of Memory Characteristics
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1406 / 2012
- Published online by Cambridge University Press:
- 16 February 2012, mrsf11-1406-z18-61
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- 2012
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Analysis on Resistance Change Mechanism of NiO-ReRAM Using Visualization Technique of Data Storage Area With Secondary Electron Image
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1250 / 2010
- Published online by Cambridge University Press:
- 01 February 2011, 1250-G12-03
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- 2010
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A Proposal of a Parallel Resistance Model for the Conduction Mechanism of Binary Transition Metal Oxide ReRAM
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- Journal:
- MRS Online Proceedings Library Archive / Volume 997 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 0997-I07-09
- Print publication:
- 2007
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