Oxygen and O2+CF4 RIE showed faster etch rate of PQ-100 film than nonoxygen containing RIE, and caused rough surface morphology. Ti shows good adhesion to the PQ-100 film because of Ti-O and possible Ti-N compound formation at the interface. No diffusion of Ti and Ti-containing precipitates were observed at the Ti/PQ interface even at temperatures of 250 °C. In contrast to the Ti/PQ interface, Cu showed very poor adhesion to the PQ film because of weak chemical bonding. Cu reaction compounds were not observed at the interface at the 250 °C annealing. Ti adhesion to the PQ-100 film was good for control, RIE modified, and water-boiled cases. Initial studies suggest a reduction in peel strength at 250 °C annealing, although this topic must be further addressed to understand the exact mechanism.