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We present the progress made in attaining high-efficiency large-area nc-Si:H based multi-junction solar cells using Modified Very High Frequency technology. We focused our effort on improving the spatial uniformity and homogeneity of nc-Si:H film growth and cell performance. We also conducted both indoor and outdoor light soaking studies and achieved 11.2% stabilized efficiency on large-area (≥400 cm2) encapsulated a-Si:H/nc-Si:H/nc-Si:H triple-junction cells.
We have developed high efficiency large area a-Si:H and a-SiGe:H multi-junction solar cells using a Modified Very High Frequency (MVHF) glow discharge process. We conducted a comparative study for different cell structures, and compared the initial and stable performance and light-induced degradation of solar cells made using MVHF and RF techniques. Besides high efficiency, the MVHF cells also demonstrate superior light stability, showing <10% degradation after 1000 hour of one-sun light soaking at 50 °C. We also studied light-induced defect level and hydrogen evolution characteristics of MVHF deposited a-SiGe:H films and compared them with the RF deposited films.
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