Recently the Flash Memory is scaling limit, Thus the Memory of various types is now under study for the next generation large capacity nonvolatile memory. Resistance random access memory (ReRAM) is attracts much attention due to its advantage for integration in the next generation nonvolatile memory, because it is depend on scaling by lithography compared with the Flash Memory of capacity type. The material for ReRAM is classified roughly into binary oxides and perovskite oxides. Several binary oxides such as a TaOx have the advantage for low-temperature process and low-cost materials compared with perovskite oxides such as a (Pr,Ca)MnO3 (PCMO). In this study, TaOx film with the thickness of 10nm were prepared by reactive RF magnetron sputtering on 8inch-Pt/Si substrate using a Ta metal target in oxygen ambient. The sputtering system was the multi chamber type mass production tool. The TaOx thin film was amorphous phase as a result of measurement by X-ray diffraction meter. Ta top electrodes with 50 um diameters were deposited on the surface of TaOx layer by the DC sputtering method using a shadow mask. The “Forming” voltage of TaOx-ReRAM was 5.0V. After “Forming” process, the “Set” and “Reset” voltage were 3.0V and –3.0V respectively. It has good switching properties with large on/off resistance ratio above 1,000.