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Dlts-Studies on the “New Oxygen Donor” in Heat Treated and Hydrogenated CZ-Grown SI
Karlheinz Hölzlein, G. Pensl, M. Schulz, N. M. Johnson
Journal: MRS Online Proceedings Library Archive / Volume 59 / 1985
Published online by Cambridge University Press: 28 February 2011, 481
Print publication: 1985
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Cz-grown Si samples containing a high concentration of oxygen are investigated after various processing steps by DLTS. Heat treatments ranging from 500°C–1000°C are performed to study the formation and annihilation of the “New Oxygen Donor” (ND) traps. Hydrogenation at low temperature leads to a reduction of the ND trap states. The experimental results confirm the “SiOx Interface Model” which assumes two differing types of interfacerelated states.