In this paper, we have studied the photoemission from quantum wells (QWs),
quantum well wires (QWWs) and quantum dots (QDs) of degenerate Kane-type
semiconductors, on the basis of a newly derived electron dispersion law
considering all types of anisotropies within the framework of k.p formalism.
It is found, taking n-Cd3 As2 as an example, that the
photoemission increases with increasing photon energy in a ladder-like
manner and also exhibits oscillatory dependences with changing electron
concentration and with film thickness, for all types of quantum confinement.
The photoemission current density is greatest in QDs and least in QWWs. In
addition, the theoretical results are in agreement with the experimental
observation as reported elsewhere.