Fabrication of a novel TFT-LCD panel, using amorphous silicon oxycarbide (a-SiCO:H) films as a passivation layer, was successfully demonstrated for the first time. The a-SiCO:H low-k films were deposited using a standard PECVD (plasma-enhanced chemical vapor deposition) reactor from a gas mixture of trimethylsilane[Si(CH3)3H] and N2O. The resulting films have a dielectric constant between 2.7 and 3.5 and high optical transmittance in the range of visible light
The transfer characteristics of the TFT's having a-SiCO:H as a passivation layer were comparable with that of a conventional TFT with a PECVD-grown SiNx passivation layer. Stability of the resulting TFT was performed under prolonged bias conditions, and the source-drain current was fairly constant over the test period. The LCD panel with the a-SiCO:H passivation layer showed 30% higher brightness than that of the standard panel.