Thin copper layers were prepared via MOCVD from volatile pyrazolylborato - copper (I) complexes.
Experiments involved chemical vapour deposition in a low pressure reactor between 150 - 350°C in H2/N2/He mixtures were carried out.
Substrate temperature, source temperature and gas composition were varied to obtain the optimum growth rate.
The copper layers were characterized by optical microscopy and scanning electron microscopy, XRD, and WDX. The metallic nature of the deposited films was proved by a four - point - probe measurement of the electrical resistivity.
A selective deposition on metal seeded surface sites was observed on Au, Al, Pt and W vs. Si02- Antiselective deposition was achieved on Pd seeded samples.