Possibility of feedback and inflation mechanism among carrier captures by a deep-level defect and transient induced lattice vibrations is discussed using proper configuration coordinate diagrams for many carriers. Treating the lattice motion classically we selfconsistently simulate the time evolution of the interaction mode and a series of athermal captures of electron(s) and hole(s). When both the activation energies E
e and E
h are small, a series of successive athermal captures is enhanced and probable for high carrier densities, however, we find that the possibility of inflation in the amplitude of the lattice vibration critically depends on the minority capture rate and the relative width of the phonon frequency distribution.