Type-II InAs/GaInSb superlattices of different designs have been grown by molecular beam epitaxy on wafer bonded InGaAs on GaAs, and on standard GaSb substrates. The extremely thin (∼100Å) InGaAs layer is loosely bonded to the GaAs substrate and serves as a compliant layer for subsequent epitaxy of a larger lattice constant material. The effects of these substrates on the optical, electrical, and structural properties of the superlattice were studied. The superlattices grown on bonded substrates were found to have uniform layers, with broader x-ray linewidths than superlattices grown on GaSb. The photoresponse results for the superlattices on the bonded 2 inch diameter substrates, with the InGaAs compliant layer, were not as favorable as early work on similar, smaller area, bonded substrates. However, refinements to the wafer bonding process to eliminate microvoids between the bonded layers will provide higher quality superlattices.