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Highly officient radiative recombination even at room temperature was found at a wavelength of about 1.3 μm in heat-treated Si-doped GaAs. The range of Si concentrations and the condition of heat-treatment to yield this intense luminescence were determined. Excitation spectra of the PL lines suggest that such PL lines are related to pairs of Si-donor and Si- acceptor and such pairs combined with gallium vacancies.
Zero-dimensional numerical computation of electrical discharge-pumped excimer lasers is extended to a one-dimensional model that is used to study the effects of the density perturbations of the background neutral gas and the nonuniform predischarge (which means preionization in this paper) electron density on the transition of the uniform discharge to the nonuniform prestage state leading to the onset of arc formation (which is not included in this particular model). It was found that a local density depression of 1% or an enhancement of the local electric field of 1% can increase the local energy input by several hundred percent. The initial electron density perturbations, on the other hand, are found to modify the energy input by the same order of magnitude as the initial perturbations.
Beam productions from ammonia ice were tried for the first time to obtain proton beams with reasonable purity under the liquid nitrogen cooling. Beam focusings and neutron productions under the target irradiations were tried with water ice. Resonant and optical interferometries were applied to observe the behavior of neutral particles within the anode-cathode gaps.
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