A study of laser annealing of a-SiC:H films was carried out in order to obtain poly-SiC films. First, a-SiC:H films were fabricated at temperatures ranging from 30 to 400 °C. All these films show amorphous structure before the annealing process. After annealing by a single pulse of 248 nm laser, films show poly-SiC structure. The pulse energies used for these anneals varied from 30 to 300 mJ/pulse. After exposing to a laser pulse, the a-SiC:H films melt and recrystallize forming poly-SiC structure. In addition to this process, a fraction of the film is observed to be vaporized. This vaporized fraction depends on the original film composition, hardness and the laser pulse-energy. Electrical resistivity of the films before the annealing process lies in the region of 1015 Ωcm. This resistivity drops drastically after the annealing process.