A variety of approaches have been used for optical limiting in the past [1–6].A relatively new approach, an electro-optic power limiter (EOPL) has a simple and compact design, wavelength agile sensitivity, the ability to respond to coherent as well as incoherent radiation, low threshold and a large field of view (up to 15°). EOPL devices allow the transmission of low intensity background radiation while simultaneously blocking the damaging high intensity beam. We have demonstrated EOPL in the past using the II-VI semiconductors CdTe:In [7,8], CdTe:V  and ZnTe . In this paper, we are reporting on EOPL using a new ternary II-VI semiconductor Cdl-xMnxTe:V. Cd0.55Mn0.45Te is capable of limiting optical radiation from visible (0.630.tm) to near infrared (1.5pm) wavelengths, which covers the wavelength ranges of both CdTe and ZnTe combined. Additionally, crystals of Cd0.55Mn0.45Te are relatively easier to grow than ZnTe. We report our preliminary results of optical limiting in Cd0.55Mn0.45Te:V at 0.780μm, 0.895μm, and 1.06μm, and we discuss the materials issues involved in improving and optimizing Cd1-xMnxTe for electro-optic power limiting.