Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Extended abstract of a paper presented at Microscopy and Microanalysis 2007 in Ft. Lauderdale, Florida, USA, August 5 – August 9, 2007

Much effort is currently being expended in nanotechnology and other fields to build biomimetic, or nature-inspired, materials. The first step in this process is often to develop a more complete understanding of the structure and chemistry of biological systems. In this article, we will compare and contrast data collected on a common biological sample, a butterfly wing, using a variety of analytical techniques. Transmission Electron Microscopy (TEM) was used in order to perform bright field imaging of the sample cross section; Light Microscopy (LM) and Scanning Electron Microscopy (SEM) were used to provide structural information of the outer wing surface at various magnifications; Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) was used in order to image the chemical composition of the outer most surface layer; and Focused Ion Beam (FIB) techniques were used to cut (micro machine) features into the wing.

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2005

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2005

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2005

Extended abstract of a paper presented at Microscopy and Microanalysis 2005 in Honolulu, Hawaii, USA, July 31--August 4, 2005

Extended abstract of a paper presented at Microscopy and Microanalysis 2005 in Honolulu, Hawaii, USA, July 31--August 4, 2005

Results are presented from a systematic investigation to design and optimize a low-pressure chemical vapor deposition (CVD) process for manganese-doped zinc sulfide (ZnS:Mn) thin films for electroluminescent (EL) device applications. The CVD process used diethylzinc (DEZ), di-π-cyclopentadienyl manganese (CPMn), and hydrogen sulfide (H2S) as co-reactants and hydrogen (H2) as carrier gas. A design of experiments approach was used to derive functionality curves for the dependence of ZnS:Mn film properties on substrate temperature and flow rates (partial pressures) of DEZ, CPMn, H2S, and H2. Film physical, chemical, structural, and optical properties were examined using Rutherford backscattering spectrometry, dynamic secondary ion mass spectroscopy, x-ray photoelectron spectroscopy, nuclear-reaction analysis, x-ray diffraction, transmission electron microscopy, atomic force microscopy, and scanning electron microscopy. EL measurements were carried out on ZnS:Mn-based dielectric–sulfur–dielectric stacks incorporated into alternating-current thin-film electroluminescent devices. An optimized process window was established for the formation of films with predominantly (0 0 2) orientation, grain size larger than 0.2 μm, and Mn dopant level approximately 0.5 at.%. A brightness of 407 cd/m2 (119 fL) and efficiency of 1.6 lm/W were obtained, as measured at 40 V above threshold voltage and 60 Hz frequency.

A Focused Ion Beam (FIB) microscope was to locally deposit platinum contacts on Multiwalled Carbon Nanotubes (MWNTs) for resistance and current carrying capability measurements. We have determined the resistivity of these ultra-thin Pt lines and the MWNT-Pt contact resistance to account for contributions to the MWNT measurements. We have studied the effects of secondary mental deposition around the contacts (‘halo’ effect) on the MENT electrical measurements as well as effects of ion beam exposure and possible ways to avoid/minimize them. Transmission Electron Microscopy data was used to evalutate MWNT surface modifications due to ion beam exposure and Pt deposition.

In this study, the Focused Ion Beam (FIB) instrument has been used for carbon nanotubes integration and nanoegineering studies. Results of thorough investigation (electrical, structural and chemical) of ultra-thin Pt contact lines and pads fabricated by the FIB, along with evaluation of nanomodification of the carbon nanotubes under the Ga+ ion beam and during Pt deposition are presented. The initial stages of FIB-assisted Pt deposition on multi-wall nanotubes are studied by transmission electron microscopy (TEM). The FIB parameters are optimized to provide non-destructive imaging and controllable Pt deposition with minimal damage on the nanotubes. We have demonstrated effective use of FIB-fabricated Pt pads as means of attaching the nanotubes to the substrate for atomic force and ultrasonic force microscopy studies.

In this study, we have demonstrated successful site-specific cross-sectioning of carbon-nanotube - metal junctions which provided samples suitable for high resolution transmission electron microscopy and electron energy loss spectroscopy. For the cross-sectioning, we have suggested a modified technique based on combination of the Focused Ion Beam (FIB) lift-out and the conventional Ar+ ion milling techniques. Electron-transparent cross-sections of multiwall carbon nanotubes showing no significant surface amorphization or Ga contamination (typical artifacts of conventional FIB lift-out technique) were obtained. High-resolution transmission electron microscopy and electron energy loss spectroscopy of a multi-wall carbon nanotube cross-section have been carried out.

We have studied the influence of overgrowth procedure and a few monolayer-thick AlAs overlayer on the properties of self-assembled InAs quantum dots (QDs) using scanning electron microscopy (SEM) and photoluminescence (PL). PL spectroscopy was used to optimize optical properties of the QDs by shape engineering (QD truncation) through adjustment of the thickness of overlayers and temperature of the subsequent heating. QDs with 6 nm - thick overlayer with subsequent heating up to 560°C was found to have the highest PL intensity at room temperature and the lowest FWHM, 29 meV. Ground state energy of the truncated QDs is very stable against variations of growth parameters. 1.23 μm edge-emitting laser of triple-layer QD structure demonstrated room temperature threshold current density, 74 A/cm2.

In this study, we have demonstrated successful site-specific cross-sectioning of carbon-nanotube - metal junctions which provided samples suitable for high resolution transmission electron microscopy and electron energy loss spectroscopy. For the cross-sectioning, we have suggested a modified technique based on combination of the Focused Ion Beam (FIB) lift-out and the conventional Ar+ ion milling techniques. Electron-transparent cross-sections of multiwall carbon nanotubes showing no significant surface amorphization or Ga contamination (typical artifacts of conventional FIB lift-out technique) were obtained. High-resolution transmission electron microscopy and electron energy loss spectroscopy of a multi-wall carbon nanotube cross-section have been carried out.

The influence of two monolayer - thick AlAs under- and overlayers on the formation and properties of self-assembled InAs quantum dots (QDs) has been studied using transmission electron microscopy (TEM) and photoluminescence (PL). Single sheets of InAs QDs were grown inside a 2ML/8ML AlAs/GaAs short-period superlattice with various combinations of under- and overlayers. It was found that 2.4ML InAs QDs with GaAs underlayer and 2ML AlAs overlayer exhibited the lowest QD surface density of 4.2×1010 cm-2 and the largest QD lateral size of about 19 nm as compared to the other combinations of cladding layers. This InAs QD ensemble has also shown the highest room temperature PL intensity with a peak at 1210 nm and the narrowest linewidth, 34 meV. Fabricated edge-emitting lasers using triple layers of InAs QDs with AlAs overlayer demonstrated 120 A/cm2 threshold current density and 1230 nm emission wavelength at room temperature. Excited state QD lasers have shown high thermal stability of threshold current up to 130°C.

The influence of two monolayer - thick AlAs under- and overlayers on the formation and properties of self-assembled InAs quantum dots (QDs) has been studied using transmission electron microscopy (TEM) and photoluminescence (PL). Single sheets of InAs QDs were grown inside a 2ML/8ML AlAs/GaAs short-period superlattice with various combinations of under- and overlayers. It was found that 2.4ML InAs QDs with GaAs underlayer and 2ML AlAs overlayer exhibited the lowest QD surface density of 4.2x1010 cm-2 and the largest QD lateral size of about 19 nm as compared to the other combinations of cladding layers. This InAs QD ensemble has also shown the highest room temperature PL intensity with a peak at 1210 nm and the narrowest linewidth, 34 meV. Fabricated edge-emitting lasers using triple layers of InAs QDs with AlAs overlayer demonstrated 120 A/cm2 threshold current density and 1230 nm emission wavelength at room temperature. Excited state QD lasers have shown high thermal stability of threshold current up to 130°C.

We present the results of detailed chemical and structural characterization of the VO2/Al/Si(100) thin film heterostructures fabricated by chemical vapor deposition and physical vapor deposition methods. The presence of the thermochromic behavior in the VO2 layer around 68°C and its correlation with the layer composition and structure are discussed. The study compares the structural and chemical properties of the two types of thin VO2 layers: one which exhibits a metal-insulator phase transition around 68°C, and another which fails to undergo the temperature-induced transition. The study of interfaces was carried out by transmission electron microscopy, and showed the existence of an aluminum oxide interfacial layer between VO2 and Al for the samples with the metal-insulator phase transition. The smooth VO2/Al interface and the presence of more than one VO2 monoclinic polytypes were observed for the CVD films exhibiting no phase transition.

Thin films of GaN grown by MOCVD on (0001) sapphire were studied by transmission electron microscopy in order to correlate the observed extended defects with crystal polarity of the films. We propose relatively simple and unambiguous method of polarity determination for wurtzite group III nitrides based on the dependence of the intensity of diffracted beams upon thickness of the specimen. Due to the dynamic scattering by polar structure, the convergent beam electron diffraction patterns lose inversion symmetry and become in fact fingerprints of the structure carrying information about crystal polarity. In this study, we have used the thinnest regions of the specimens (<15 nm) and multiple diffraction spots in high-symmetry orientation for polarity determination. The films were found to have Ga-polar surfaces, either being unipolar, or containing thin (10-30 nm in diameter) columnar inversion domains (IDs) of N-polarity. The occurrence of IDs was correlated with specific types of dislocation distribution in the films.

We have studied crystal structure and associated defects in GaN films grown on sapphire under nitrogen-deficient conditions by metalorganic chemical vapor deposition (MOCVD) and pulsed laser deposition (PLD). The structural quality of the PLD films grown at 750 °C was comparable with those grown by MOCVD at 1050 °C having threading dislocations density of about 1010 cm−2 at a film thickness 150-200 nm. Microstructure of the PLD films grown at temperatures above 780°C was found to be similar to that of nitrogen-deficient MOCVD films indicating the loss of nitrogen due to thermal decomposition of the nitride layers. Nitrogen-deficient MOCVD and PLD films exhibit polycrystalline structure with a mixture of cubic zinc-blende and wurtzite hexagonal GaN grains retaining tetragonal bonding across the boundaries and hence the epitaxial orientations and polarity. Renucleation of the wurtzite phase at different {111} planes of cubic GaN results in a rough and faceted surface of the film. Most of the stoichiometric films displayed (0001) Ga-face polarity, but the renucleated inclined wurtzite grains grew in the opposite N-face polarity. The major defects related to the cubic structural metastability are stacking faults and microtwins which being nuclei of the metastable cubic phase have an extremely low energy. We elucidate that the cubic phase is more stable under the nitrogen deficiency and, therefore, can exist without decomposition at higher nitrogen vacancy concentrations in the material.