Stability of functional devices such as light-emitting devices and chemical or biological sensors is an important issue nowadays. Nanostructured silicon made using top-down methodologies is being employed as a material to develop such systems, but surface stability to external ambient conditions is still an open question. One of those important conditions is oxidation. Although there exist models accounting for the role of oxide layers on semiconductor systems, experimental data is still required to provide further useful information. In this paper, we perform oxidation processes to light-emitting nanostructured silicon and study the contribution of quantum dots and quantum wires to photoluminescence as surface oxidation evolves. Cross-correlations with infrared spectroscopy are also included.