Thermal pulse annealing has been used to modify the near surface of Hg1−xCdxTe. Using anneals of approximately 260°C for seven seconds, the crystal quality of epitaxial HgCdTe surfaces can be improved as observed by MeV He+ ion channeling. Similar anneals have also been used to repair the damage resulting from a 250 keV, 1015
11 B/cm2 implant into HgCdTe held at LN2. For higher temperatures and/or longer anneals, surface Hg loss is observed. Rutherford Backscattering measurements are used to measure this loss. The resulting loss rate data is described by No= A exp (−ΔE/kT) where A and ΔE depend on the material composition with A = 1029, ΔE = 1.8 eV and A = 1036, ΔE = 2.6 eV for x = 0.23 and 0.4, respectively.