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Using the transfer matrix method and the Ben Daniel-Duke equation for variable mass electrons propagation, we calculate the transmittance for a finite superlattice where the potential barriers height follows a linear dependence like that of an inverted “V” letter. The energy dependence of the transmittance presents intervals of stopbands and nearly flat passbands. We calculate these properties for several numbers of barriers as well as for different barrier and wells widths and compare those with a regular superlattice.
In this work, we calculated the ground and first excited states of an electron confined in an asymmetric double DDQW system within a Gallium Arsenide (GaAs) matrix. The two-dimensional impurities density (N2d) considered in our calculation are within the range of 1012 to 1013 cm−2. We obtain the linear and nonlinear optical properties related to intersubband transitions as a function of the spacing between δ-doped wells, two-dimensional impurities concentrations as well as in presence of electric field. We reported results for the linear and nonlinear optical absorption coefficient and in the relative refractive index changes. Our results show that the asymmetry induced in the double δ-doped well system gives rise to values that are several orders of magnitude higher in the resonant peaks intensity.
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