Analytical electron microscopy (AEM) was used to examine the initial interfacial reaction layers between a eutectic Sn–3.5Ag solder and an electroless nickel-immersion gold-plated (ENIG) Cu substrate during reflow at 255 °C for 1 s. AEM confirmed that a thick upper (Au,Ni)Sn2 layer and a thin Ni3Sn4 layer had formed through the reaction between the solder and ENIG. The amorphous electroless Ni(P) plated layer transformed into two P-rich Ni layers. One is a crystallized P-rich Ni layer, and the other is an intermediate state P-rich Ni layer before the crystallization. The crystallized P-rich layer consisted of Ni2P and Ni12P5. A thin Ni2P layer had formed underneath the Ni3Sn4 layer and is believed to be a predecessor of the Ni2SnP ternary phase. A Ni12P5 phase was observed beneath the Ni2P thin layer. In addition, nanocrystalline Ni was found to coexist with the amorphous Ni(P) phase in the intermediate state P-rich Ni layer.

We report on the basic characteristics and gas sensing operation of density controlled single-walled carbon nanotube (SWCNT) thin films on poly(dimethyl siloxane) (PDMS) substrates The vacuum filteration and PDMS mold transfer method allowed the density of SWCNT distributed to have non-local uniformity. The optical transparency of the SWCNT thin films was inversely proportional to SWCNT density and conductivity. The flexible SWCNT thin film showed high mechanical stability with negligible change in conductance after being bent by 180o. We evaluated its gas sensing operation depending on SWCNT density and bias voltage. It was shown that lower SWCNT density thin films had higher sensitivity to NH3 gas, which may be due to higher exposed surface area for lower density SWCNT thin films. Also, we found that lower bias voltage devices showed faster recovery times. The results show that vacuum filteration and mold transfer method produced flexible SWCNT thin films that have stable mechanical and electrical characteristics and also stable gas sensing capabilities making them applicable to future flexible integrated sensors.

We report the failure mode observed in polymer EL blue device. Such modes were analyzed by non-destructive and destructive ways. As a non-destructive way, investigation of mobility changes of hole and electron, measuring transient EL corresponding to life curve, had been done. We also observed compositional and morphological variation using TEM-EDX, STM, FT-IR, TOF-SIMS and reverse engineering method as a destructive way. Electron mobility has a higher dependency on life curve, which fact could be reflected on the formation of insoluble layer inside emitting layer on anode side. And such insoluble layer showed relatively ordered surface morphology, and might be a cross-linked layer through C-O-C bond cleavage process while EL operation. But, contrary to sulfur migration mechanism into insoluble layer insisted by CDT, we did confirm no obvious difference of sulfur composition between insoluble and emitting layers. Rather, there's some degree of Ba diffusion into emitting layer from decomposition of BaF2, but, which dose not have a major effect on device degradation.

Conventional Ge2Sb2Te5 (GST) was modified by adding up a small amount of SiOx, using co-sputtering technique from multiple targets. The SiOx content was gradually increased by increasing the power applied to SiOx target, up to 8 volume percent. The sheet resistance of SiOx-containing GST exponentially increased, when the room-temperature-deposited samples were annealed at 300 °C. Transmission electron microscopy images revealed that no SiOx particulates were formed, which was confirmed by Gattan image filtering. It was indicated by x-ray diffraction patterns that the grain size of SiOx-containing GST is smaller than normal GST with lattice locally distorted at its crystalline state, suggesting that molecular SiOx is homogeneously distributed throughout the GST matrix. We observed that the crystallization temperature of SiOx-containing GST is gradually elevated by increasing the SiOx content, while the melting point decreased. These observations led to the reset current reduction, which is a critical requirement for the high density PRAM.

Structure and composition of the ferroelectric Pb(Zr, Ti)O3 layers in a capacitor of the ferroelectric random-access memory (FeRAM) device having a density of 64 k were investigated by transmission electron microscopy (TEM) together with the energy-dispersive spectroscopy (EDS) technique. The 250 nm thick PZT layer derived by the sol-gel route showed a 2–3% Pb-deficient, 3–4% Ti-deficient, and 5–7% Zr-excess composition at the top electrode interface compared to the bulk composition when they were as-fabricated. The local compositional nonuniformity became more critical as the integration process proceeded, which seriously degraded the ferroelectric hysteresis and the device yield. The major cause of the compositional variation was the outward diffusion of Pb through the capping barrier TiO2 layer during annealing at 650 °C. The AlN capping barrier layer was also not effective in suppressing the diffusion of Pb. However, the Al2O3/TiO2 double capping layer was very effective in suppressing the outward diffusion of Pb, and excellent ferroelectric characteristic was expected.