Plasma-enhanced chemical vapor deposition (PECVD) is being developed as a flexible coating technology for a variety of oxides. In this paper we discuss the synthesis of transparent conducting oxides (TCOs), insulating oxides and electrochromic oxides. Tin oxide was synthesized using mixtures of SnCl4 and O2. By proper control of processing conditions the resistivity of this material may be varied from 10-3 < ρ < 105 Ω-cm. Films of varying resistivity were employed as buffer layers in CdS/CdTe solar cells. Preliminary device results have demonstrated that integration of a tin oxide buffer layer was very beneficial for cell performance. In addition, we demonstrate the PECVD synthesis of WO3 from WF6/O2/H2/Ar mixtures. The plasma process space that yielded adherent, transparent tungsten oxide was established. The deposited films were both amorphous and reversibly electrochromic. High temperature annealing above 400°C converted the films into a polycrystalline state.