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This paper presents a summary of the current state of our understanding of the absolute reactivity of transient silicon hydride species, such as SiH, SiH2 and SiH3 in the gas phase and at the surface of thin films.
Laser-based techniques have been developed to directly study the kinetics of the reactions of the mono-silicon hydride radicals SiH, SiH2 and SiH3. A summary of rate constants obtained from these studies is presented along with a discussion of the implications of these results for present mechanistic models of the PECVD of amorphous hydrogenated silicon from silane.
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