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We have continued our investigation1 of the effects of pre—deposition substrate annealing for the case of MBE grown silicon on sapphire. Three identical series of samples were grown with film thicknesses ranging between 65 and 1500 angstroms. Each series of samples was grown upon sapphire which had been annealed at either 1450ºC, 1300ºC, or 900ºC. The growth temperature and growth rate were the same for each series. The anneal time for each sample was 30 minutes.
Low-order, monolayer by monolayer (1×1) AlAs/GaAs superlattices grown by MBE using different growth techniques have been studied by X-ray diffractometry. High-resolution multiple-crystal diffractometry was used to study diffraction features near the  peaks due to the substrate and epilayers. Using this technique, we have investigated the effect of growth techniques on the strain and tilt of the superlattices. High-resolution X-ray diffraction (HRXRD) results suggest that the sample grown by migration-enhanced epitaxy (MEE) is more highly strained and has more tilt than the same superlattice sample grown using the interrupted growth (IG) technique.
Photoreflectance (PR) was used to study crystalline quality and stress in silicon films on insulator. The position and amplitude of the 3.4 eV PR silicon structure was monitored for both MBE silicon on sapphire (SOS) and SIMOX structures. The SOS film thicknesses ranged from 6 to 4000 nm. The shift in energy of the 3.4 eV structure from its bulk position is dependent on the sample thickness and on the strain in the films. In the SIMOX case, the amplitude of the 3.4 eV PR signal provided information about the crystalline quality of the top silicon layer for a set of six samples, each one removed at a different step of a process involving three implantation-anneal cycles. In this case the PR signal appeared to deteriorate with the each cycle undergone by the samples. Further investigations are needed to resolve the discrepancy bet ween these SOS results and the ones obtained in an earlier set of measurements.
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