We have successfully developed a Seebeck coefficient Standard Reference Material (SRM™), Bi2Te3, that is essential for interlaboratory data comparison and for instrument calibration. Certification measurements were performed using a differential steady-state technique on 10 samples (15 measurements) randomly selected from a batch of 390 bars. The certified Seebeck coefficient values are provided from 10 to 390 K, and they are further supported by transient measurements. The availability of this SRM will validate measurement results, leading to a better understanding of the structure/property relationships and underlying physics of potential high-efficiency thermoelectric materials.

Three samples of self-assembled In0.44Ga0.56As quantum dots (QDs) grown on (001) GaAs by molecular beam epitaxy (MBE) were studied using atomic force microscopy (AFM) and high-resolution transmission electron microscopy (TEM) in order to characterize the height, faceting, and densities of the QDs. The cross-sectional TEM images show both pyramidal dots and dots with multiple side facets. Multiple faceting has been observed only in dots more than 8.5 nm in height and allows increased dot volume without a substantial increase in base area. Addition of a GaAs capping layer is found to increase the diameter of the QDs from roughly 40 nm to as much as 200 nm. The areal QD density is found to vary up to 50 % over the central 2 cm x 2 cm section of wafer and by as much as 23 % on a length scale of micrometers.

Thin films of composition (Ba,Sr)yTiO2+y with 0.43 ≤ y ≤; 1.64, were deposited by metalorganic chemical vapor deposition on (100) MgO substrates at various growth conditions. X-ray diffraction and transmission electron microscopy studies showed that the films were composed of epitaxial Ba1–xSrxTiO3 (x ≈0.06) grains and an amorphous phase. The orientation of the tetragonal Ba1–xSrxTiO3 grains (pure a axis, pure c axis, or a mix of the two) was found to be strongly dependent upon film composition. This composition dependence is explained for the majority of the Ti-rich films by an analysis of average strains in the two-phase films, assuming a compressive strain of ≈1% in the amorphous phase.

A new method of electron interferometry/holography (CBED+EBI/H) has been realized which produces interference between convergent beam electron diffracted beams. An electron biprism placed between the diffracted beams compensates for their diffraction angle by an induced potential. When overlaid the diffracted beams interfere to produce an interferogram. Holography is possible due to coherency of the electron beam. Reconstruction of the hologram by standard methods enables the phase change around the defects to be measured. These methods are very easy to apply and examples are given for small defects and defect clusters in heavy-ion implanted Si.

Ultrafine particles (UFPs) of aluminum oxide were prepared by an arc discharge, sintered in a custom-built ultrahigh vacuum (UHV) furnace system, and characterized in a high resolution electron microscope (HREM) operating under UHV conditions. The UFPs produced range in size from 20 to 50 nm and have highly faceted surfaces. The atomic structure of the UFPs corresponds to the cubic (γ) and orthorhombic (δ) variants of the spinel structure. Sintering in these UFPs demonstrates three major issues. Surface faceting plays a major role in determining the final sintering geometry with sintering occurring predominantly on the close-packed {111} facets. Surface diffusion is the predominant mechanism for sintering, as evidenced by the fact that many sintered particles have their initial adhesion structure ‘locked-in’ during sintering with no reorientation occurring. Furthermore, the necks formed during sintering have well-defined, atomically sharp contact angles which suggests that the neck growth process is controlled by the faceted structures and may be modeled by a mechanism similar to crystal growth due to ledges, grain boundaries, and twins. The driving force for sintering can be considered as a chemical potential difference between facet surfaces and the neck region.