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In this work, a novel low dielectric constant (low-k) pore sealing approach was engineered by depositing firstly a sub-2 nm SAMs and then a 3 nm TiN barrier film. The low-k film was pretreated by plasma to introduce hydroxyl groups onto the surface, followed by SAMs deposition. Then a TiN film was deposited from tetrakis(dimethylamino)titanium (TDMAT) via ALD as a dielectric barrier. Penetration of Ti atoms into low-k was measured and used to evaluate the sealing ability of SAMs. For the samples covered with SAMs, around 90% reduction of Ti atoms penetration was achieved. The pore radius was reduced to below 0.5 nm after the barrier deposition. The ∆k after pretreatment and after SAMs are 0.1 and 0.16, respectively.

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A scheme to correct for inaccuracies in the compositional analysis of SixGe1-x by Atom Probe Tomography

Stoichiometric analysis of superficial Ba doped Strontium Titanium Oxide layers using APT: the case of the missing Oxygen!

Sealing of low-k dielectric (k=2.0) with self-assembled monolayers (SAMs) for the atomic layer deposition (ALD) of TiN

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3 results

A scheme to correct for inaccuracies in the compositional analysis of SixGe1-x by Atom Probe Tomography

Stoichiometric analysis of superficial Ba doped Strontium Titanium Oxide layers using APT: the case of the missing Oxygen!

Sealing of low-k dielectric (k=2.0) with self-assembled monolayers (SAMs) for the atomic layer deposition (ALD) of TiN