In this paper, using chemical etching, atomic force microscope (AFM) and High- resolution X-ray diffraction (HRXRD), we report a study of the effect of various small miscuts of (0001) sapphire substrate (<1°) and the way to further improve the material quality. A set of AlN epilayers and AlN/AlxGa1-xN Superlattices (SLs) were grown by Migration-enhanced Metalorganic Chemical Vapor Deposition (MEMOCVD) on vicinal (0001) sapphire substrates. The threading dislocation density was found to be very sensitive to the miscut angles. The etch pit density reduced to 7×106 cm-2 for normal-oriented (0°-off) from the starting value of 7×107 cm-2 for 0.5°-off. We found the surface morphologies can be easily controlled by the different substrate miscut angles. The 1-2 Monolayers (MLs) step flow morphology for normal- oriented substrate changed to step bunches of 10 MLs height for 0.5°-off substrate. Correspondingly, AFM Root Mean Square (RMS) increased from 1.52 to 9.15 Å with a 5um×5um scan. This finding may help enhance the quality of full structure UVLED material and eventually improve the lifetime of UVLEDs.