High-κ and metal gate structures have been used to improve the performance of CMOS devices. By changing the materials and structures of the gate dielectric stacks, the flatband voltage (VFB) and the leakage can be changed. We used bilayers and multilayer structures composed of MgO and Al2O3 to verify their influence on the overall electrical properties. Films with an MgO bottom layer generally are found with less flatband voltage shift and lower leakage than with an Al2O3 bottom layer. Also, the frequency dispersion and the interface state density (Dit) are higher for those with MgO bottom layers. MgO films thicker than 0.5 nm effectively shields the positive charges present in the Al2O3.

Vanadium oxides are strongly correlated electron systems that are interesting both from a fundamental scientific point of view and for possible future applications including memory and sensors. In this contribution, we report on the epitaxial growth of V2O3 thin films on c-Al2O3 (0001) with molecular beam epitaxy and atomic oxygen. We studied the influence of deposition rate and substrate temperature on the structural properties and the metal-insulator transition.

Dysprosium oxide (Dy2O3) films are grown epitaxially on high mobility Ge(100) substrates by molecular beam epitaxy system. Reflection high energy electron diffraction patterns and X-ray diffraction spectra show that single crystalline cubic Dy2O3 films are formed on Ge(100) substrates. The epitaxial-relationship is identified as Dy2O3 (110)║Ge(100) and Dy2O3 [001]║Ge[011]. Atomic force microscopy results show that the surface of the Dy2O3 film is uniform, flat and smooth with root mean square surface roughness of about 4.6Å. X-ray photoelectron spectroscopy including depth profiles confirms the composition of the films being close to Dy2O3. TEM measurements reveal a sharp, crystalline interface between the oxide and Ge.

In this paper, we point out the critical role of oxygen stoichiometry in the solid state epitaxy process used for obtaining 5 A EOT in SrTiO3 gate dielectrics on Si. Incomplete oxygenation of the TiO2 fraction of the amorphous SrO.TiO2 film enhances the inherent tendency of TiO2 to react with Si to yield TiSi2 and SiO2. O2 excess is needed to obtain a crystalline interface after UHV crystallization. The solid state epitaxy process results in heavily oxygen deficient films, whose insulating properties can be recovered by an atomic oxygen treatment.

The origin of the exchange bias between a ferro- and an antiferromagnet still is not fully resolved. Many structural parameters such as film thickness, roughness, domain size, domain walls, strain, dislocations, and surface defects play a role. To disentangle their individual contributions, one must correlate each of these structural effects with the exchange bias. Here we report our first such attempts using thin films of the antiferromagnetic orthoferrite LaFeO3 grown by molecular beam epitaxy. We investigate how the epitaxial relationship and strain affect the domain configuration as well as their size and orientation. Next, we explore how these different domains can pin ferromagnetic domains in exchange-coupled systems. We conclude that decreasing the domain size of the antiferromagnet leads to a higher exchange bias. The highest exchange bias was obtained for LaFeO3 films on MgO substrates.

Since the discovery of superconductivity in layered cuprates there has been a strong desire to grow thin films of these materials in a so-called layer-by-layer manner, where each layer represents one atomic monolayer. There has been worldwide interest in this problem and numerous groups have invested time and equipment in an attempt, first, to grow the known materials using a sequential deposition technique so that the atomic monolayers are stacked artificially on top of one another in a sequence defined by the structure of the given unit cell, and second, to search for new stacking sequences of such atomic monolayers, thus making metastable compounds.

Understanding the growth of thin films using any deposition technique requires information about two fundamental processes, the nucleation of a crystal and its growth. Both are strongly affected by the three thermodynamic parameters, temperature, pressure, and chemical potential (composition), at the growth front. The third parameter, the surface composition from which the desired compound can nucleate and propagate, probably provides the greatest degree of freedom in the growth process. The compositional phase diagrams of most cuprates show that several phases can coexist with the superconducting phase at a certain temperature and pressure. This is also the main reason why a widely changing surface composition, such as that present during layer-by-layer or block-by-block deposition, still produces high-quality thin films.