Liquid phase electroepitaxial technique has been used for the growth of GaSb and GalnAsSb in the composition range corresponding to peak band gap wavelengths of 1.7-2.28μm. The growth rate of these layers were examined as a function of current density. The growth rates of these layers are typically 0.8μm/min. at a current density of 10A/cm2. The quality of the layers was evaluated by x-ray diffraction and room temperature photoluminescence.