Antibody-functionalized, Au-gated AlGaN/GaN high electron mobility transistors (HEMTs) were used to detect Perkinsus marinus. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN/GaN HEMT were grown by a molecular beam epitaxy system (MBE) on sapphire substrates. Infected sea waters were taken from the tanks in which Tridacna crocea infected with P. marinus were living and dead. The AlGaN/GaN HEMT showed a rapid response of drain-source current in less than 5 seconds when the infected sea waters were added to the antibody-immobilized surface. The recyclability of the sensors with wash buffers between measurements was also explored. These results clearly demonstrate the promise of field-deployable electronic biological sensors based on AlGaN/GaN HEMTs for Perkinsus marinus detection.