Thin films of lead zirconate titanate (PZT) are currently being used in a novel MEMS device to generate power. A piezoelectric stack consisting of platinum/PZT/gold is deposited by sputtering, spin coating, and subsequent heat treatments onto a thin silicon membrane, which is cyclically polarized by a flexing motion. The membrane must withstand strains between 0.1% and 0.5% for several billion cycles to provide a useful device. This study has examined the processing-structure-property relationships in developing the PZT film for use in this device. In the sol-gel deposition of PZT, pyrolysis and crystallization temperatures have been shown to alter both microstructure and properties of the piezoelectric film. The chemistry of the PZT film has also been tailored to increase piezoelectric output for this device. Ferroelectric properties are compared to the piezoelectric outputs, and fatigue behavior is measured on bulk silicon and on membranes.