Strontium sulfide (SrS) is known to have an indirect bandgap of ∼ 4.32 eV. When doped with tellurium (Te), ultraviolet emission occurs at 360 nm (for Tes singlet) and 400nm (for Tes- Tes dimers) due to radiative recombination from bound exciton states. In this paper we discuss the ultraviolet emission of pulsed laser deposited thin films of SrS:Te grown as SrS-Te and SrSTe- SrS multi-layer structures on Si substrates. The Te doping was incorporated by conventional diffusion into the SrS films. Temperature dependent ultraviolet emission measurements were taken and will be discussed along with results from microstructural and chemical characterization techniques.