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Bonding Constraints at Interfaces Between Crystalline Si and Stacked Gate Dielectrics
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- Journal:
- MRS Online Proceedings Library Archive / Volume 567 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 201
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- 1999
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Why SiNx:H is the Preferred Gate Dielectric for Amorphous Si Thin Film Transistors (TFTS) and SiO2 is the Preferred Gate Dielectric for Polycrystalline Si TFTs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 558 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 135
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- 1999
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Link of the Hipparcos Stellar Reference Frame to the Distant Quasars
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- Journal:
- International Astronomical Union Colloquium / Volume 164 / 1998
- Published online by Cambridge University Press:
- 12 April 2016, pp. 381-382
- Print publication:
- 1998
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Some Uses of Crystallographic Databases and Bibliographies
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- Journal:
- MRS Bulletin / Volume 18 / Issue 2 / February 1993
- Published online by Cambridge University Press:
- 29 November 2013, pp. 38-39
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- February 1993
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Growth and characterization of ultrathin cobalt silicide films on Si(211) and (311)
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- Journal:
- Journal of Materials Research / Volume 5 / Issue 5 / May 1990
- Published online by Cambridge University Press:
- 31 January 2011, pp. 1032-1041
- Print publication:
- May 1990
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Solids and Surfaces: A Chemist's View of Bonding in Extended StructuresRoald Hoffmann VCH Publishers, 1988 ISBN: 049573-709-4
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- Journal:
- MRS Bulletin / Volume 15 / Issue 1 / January 1990
- Published online by Cambridge University Press:
- 29 November 2013, pp. 55-56
- Print publication:
- January 1990
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