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1 results

Is B(CH3)3 An Interesting Alternative to B2H6 for a-Si:H p Doping?
Wu Zongyan, A. Lloret, J.-M. Siefert, P. Roca i Cabarrocas, B. Equer
Journal: MRS Online Proceedings Library Archive / Volume 149 / 1989
Published online by Cambridge University Press: 25 February 2011, 291
Print publication: 1989
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The contamination effects induced by B2H6 and B(CH3)3 in a-Si:H layers are compared, using in-situ Kelvin probe experiments as well as SIMS measurements. It is found that B(CH3)3 induces at least 50 times less contamination, even at 250°C. It is also found that materials containing CH3 radicals have a lower electron affinity.