In the presented work, we have developed VLSI technology processes for new prototype sensors based on the synthesis of boron doped nanocrystalline diamond (B-NCD) and silicon based commercial detectors. The process is based on commercial passivated implanted planar silicon (PIPS) devices of PD450 and CAM450 types (CANBERRA). A layer of B-NCD of several hundred nanometers thickness and boron concentration up to 1021 atoms/cm3 is grown on the SiOx passivation layer in an ellipsoidal plasma enhanced chemical vapor deposition (PECVD) reactor at temperatures from 520-750°C, in hydrogen atmosphere. . The diamond electrode is dry chemically structured and aluminum electrodes are realized before mounting in a three-fold housing for measurements in aqueous solution. The prototype sensors show an alpha spectroscopy resolution of 100 keV for 241Am electroprecipitated from liquid solution.