Surface topography of a-Si:H thin films, deposited at 75°C by Plasma-enhanced Chemical Vapor Deposition (PECVD) has been examined using helium/silane feedstock mixtures under different substrate bias conditions. Notable differences in the surface roughness evolution are shown for films deposited in “cathodic” versus “anodic” mode – where the substrate is placed on the powered and grounded electrode respectively. Smooth and apparently featureless surfaces result from deposition on RF powered surfaces, upon which a self-bias induces high-energy ion bombardment. Rougher surfaces result from films deposited on electrically grounded surfaces. These anodic films show that after a transition period, surface roughness grows linearly with processing time, exhibiting mounded type growth as evidenced by 2-D power spectral density functions of surface height measurements. Linear growth in roughness has been predicted for shadow growth models assuming film precursor sticking coefficients of one and random angle approach of film precursor species. Growth of this nature has not been reported before in a-Si:H studies, which usually assume directional deposition conditions and sticking coefficients less than unity – occurring even at low processing temperatures.