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Transmission election microscopy studies show that nitrogen doping changes the misfit dislocation structure in ZnSe films and decreases the density of threading dislocations. There appears to be a critical N doping concentration of ∼ 1.5 × 1018/cm3 above which the density of threading dislocations increases again. Samples with high N doping concentrations (> 1019/cm3 ) also show compensation or decrease in the carrier density of the films. Our TEM observations show that N doping can produce low energy nucleation sites for the 60° misfit dislocations at or close to the ZnSe/GaAs interface.
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